Structure and Motion of Misfit Dislocations at Ni/Ni3Al Interface : Molecular Dynamics Study
نویسندگان
چکیده
منابع مشابه
Ab initio study of misfit dislocations at the SiC/Si(001) interface.
The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for...
متن کاملMassive Interfacial Reconstruction at Misfit Dislocations in Metal/Oxide Interfaces
Electronic structure calculations were performed to study the role of misfit dislocations on the structure and chemistry of a metal/oxide interface. We found that a chemical imbalance exists at the misfit dislocation which leads to dramatic changes in the point defect content at the interface - stabilizing the structure requires removing as much as 50% of the metal atoms and insertion of a larg...
متن کاملFermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
Fermi-level pinning by misfit dislocations at GaAs interfaces has been investigated. n -GaInAs was used to control the misfit dislocation density by varying of composition and epilayer thickness. interfaces with zero or low dislocation densities are Ohmic to current flow, and become rectifying with increasing dislocation density. The "Schottky barrier height" increases with dislocation density ...
متن کاملthe study of bright and surface discrete cavity solitons dynamics in saturable nonlinear media
امروزه سالیتون ها بعنوان امواج جایگزیده ای که تحت شرایط خاص بدون تغییر شکل در محیط منتشر می-شوند، زمینه مطالعات گسترده ای در حوزه اپتیک غیرخطی هستند. در این راستا توجه به پدیده پراش گسسته، که بعنوان عامل پهن شدگی باریکه نوری در آرایه ای از موجبرهای جفت شده، ظاهر می گردد، ضروری است، زیرا سالیتون های گسسته از خنثی شدن پراش گسسته در این سیستم ها بوسیله عوامل غیرخطی بوجود می آیند. گسستگی سیستم عامل...
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Society of Materials Science, Japan
سال: 2007
ISSN: 1880-7488,0514-5163
DOI: 10.2472/jsms.56.439